SSF2318E Ver la hoja de datos (PDF) - GOOD-ARK
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SSF2318E Datasheet PDF : 4 Pages
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SSF2318E
20V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
VGS=±4.5V,VDS=0V
IGSS
VGS=±8V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
gFS
VDS=5V,ID=6.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=10V,VGS=0V,
F=1.0MHz
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=10V,ID=1A
VGS=5V,RGEN=3Ω
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS=10V,ID=6.5A,
VGS=4.5V
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
Min Typ Max Unit
20
V
1
μA
±1
uA
±10
uA
0.4 0.6
1
V
18
22
mΩ
21
26
mΩ
26
34
mΩ
7
S
1160
PF
200
PF
140
PF
6.5
nS
13
nS
50
nS
30
nS
10
nC
2.3
nC
3
nC
0.76
1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
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