2N6530 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2N6530

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2N6530

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA

VBE(on)-1 Base-Emitter On Voltage

IC= 5A; VCE= 3V

V BE(on)-2 Base-Emitter On Voltage

IC= 8A ; VCE= 3V

ICEO

Collector Cutoff Current

VCE= 80V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 5A; VCE= 3V

hFE-2

DC Current Gain

IC= 8A ; VCE= 3V

COB

Output Capacitance

VCB= 10V;IE= 0; f= 1MHz

MIN TYP. MAX UNIT

80

V

2.0

V

3.0

V

2.8

V

4.5

V

1.0 mA

5

mA

1000

10000

100

5000

200 pF

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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