Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N5954 2N5955 2N5956
DESCRIPTION
·With TO-66 package
·Low collector-emitter saturation voltage
·Excellent safe operating area
·Complement to type 2N6372 2N6373 2N6374
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N5954
VCBO
Collector-base voltage 2N5955
2N5956
2N5954
VCEO
Collector-emitter voltage 2N5955
2N5956
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
90
70
50
80
60
40
5
6
2
40
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
4.3
UNIT
℃/W
JMnic