2N5739 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N5739 Datasheet PDF : 2 Pages
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J.£.ii£.u £~>£,m,l-L.onau.ctoi
C/
L/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, line.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5739
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= -60V(Min.)
• Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ lc= -5A
• Wide Area of Safe Operation
APPLICATIONS
• Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
I CM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100°C
Tj
Junction Temperature
Tstg
Storage Temperature
-4
A
20
W
150
'C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(h j-a
Thermal Resistance, Junction to Ambient 4.56 °c/w
PIN 1.BASE
3 COLLECT OR (CASE)
TO-66 package
JL
1
-JU-D a n IK
—U-
ZJT7
nun
DIM MIN MAX
A 31.40 31.80
B 17.30 17.70
C 6.70 ,7.10
D 0.70 0.90
E 1.40 1.60
G
5.03
H
2.54
K 9.80 10.20
L 14.70 14.90
N 12.40 12.60
9 3.60 3.SO
U 24.30 24.50
V 3.50 3.70
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placingorders.
Quality Semi-Conductors
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