2N6714 Ver la hoja de datos (PDF) - Continental Device India Limited

Número de pieza

componentes Descripción

Fabricante

2N6714

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

2N6714

2N6715

2N6716

ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)

Description

Collector Cutoff Current

VCB=40V, IE=0

VCB=50V, IE=0

VCB=40V, IE=0

D.C. Current Gain

IC=10mA, VCE=1V

IC=100mA, VCE=1V

IC=1A, VCE=1V

Symbol

2N6714

2N6715

2N6716

ICBO

2N6714/6715 hFE

2N6714/6715

2N6714/6715

Min.

-

-

-

55

60

50

Max.

100

100

100

-

-

250

IC=50mA, VCE=1V

2N6716

80

IC=250mA, VCE=1V 2N6716

50

IC=500mA, VCE=1V 2N6716

20

Collector-Emitter Saturation Voltage

IC=1A, IB=100mA

2N6714/6715 VCE(sat)

-

IC=250mA, IB=25mA 2N6716

-

Base Emitter on Voltage

IC=1A, VCE=1V

2N6714/6715 VBE(on)

-

-

250

-

0.5

0.35

1.2

Unit

nA

nA

nA

V

V

V

DYNAMIC CHARACTERISTICS

Output Capacitance

VCB=10V, IE=0,

ALL

C ob

f=1MHz

Current-Gain-Bandwidth Product

IC=50mA, VCE=1V

2N6714/6716 fT

2N6715

-

20

pF

50

500

MHz

50

400

MHz

Continental Device India Limited

Data Sheet

Page 2 of 3

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