2N6316 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2N6316

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 80V(Min)

·Low Collector Saturatioin Voltage-

: VCE(sat)= 1.0V(Max.)@ IC= 4A

·DC Current Gain-

: hFE= 20(Min) @ IC= 2.5A

·Complement to Type 2N6318

APPLICATIONS

·Designed for general-purpose power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

80

VCEO

Collector-Emitter Voltage

80

VEBO

Emitter-Base Voltage

5

IC

Collector Current-Continuous

7

ICM

Collector Current-Peak

15

IB

Base Current-Continuous

2

PC

Collector Power Dissipation

@ TC=25℃

90

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

1.94 ℃/W

SPTECH website：www.superic-tech.com

2N6316

1

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