2N6250 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6250 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 275V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for high voltage, high current ,high speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
375
V
VCEO Collector-Emitter Voltage
275
V
VCEV Collector-Emitter Voltage
300
V
VCER Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
SPTECH website：www.superic-tech.com
2N6250
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