BDW74 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BDW74 Datasheet PDF : 2 Pages
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-/
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW74/A/B/C/D
DESCRIPTION
• Collector Current -lc= -8A
• High DC Current Gain-hFE= 750(Min.)@ lc= -3A
• Complement to Type BDW73/A/B/C/D
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25t)
SYMBOL
PARAMETER
VALUE
BDW74
-45
Vceo
Collector-Base
Voltage
BDW74A
-60
BDW74B
-80
BDW74C
-100
BDW74D
-120
BDW74
-45
VCEO
Collector-Emitter
Voltage
BDW74A
-60
BDW74B
-80
BDW74C
-100
BDW74D
-120
VEBO
Emitter-Base Voltage
-5
Ic
Collector Current-Continuous
-8
IB
Base Current-Continuous
-0.3
Collector Power Dissipation
@ Ta=25°C
2
PC
Collector Power Dissipation
@ TC=25'C
80
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65-150
UNIT
V
V
V
A
A
W
°C
"C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-c Thermal Resistance, Junction to Case
MAX
1.56
UNIT
•c/w
62.5 'CM/
Quality Semi-Conductors
™
i
12 3
92
.
-3
N 1.BASE
Pl
2. COLLECTOR
3. EMITTER
TO-220C package
t ~^->
lyt J-€ft
V
A
>
1 ' • ».«IV
'• H ' ,
K^l
1....
G «-
5o4-<-
H
C
:J
mm
DIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
0 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u 6.45 6.65
V 8.66 8.86
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