BDW74C Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Fabricante

BDW74C

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

BDW74/A/B/C/D

ELECTRICAL CHARACTERISTICS

Tc=25*C unless otherwise specified

SYMBOL

PARAMETER

BDW74

CONDITIONS

Collector-Emitter

V(BR)CEO Breakdown Voltage

BDW74A

BDW74B lc= -30mA; IB= 0

BDW74C

BDW74D

VcE(sal)-1 Collector-Emitter Saturation Voltage lc=-3A;lB=-12mA

Vce<sat)-2 Collector-Emitter Saturation Voltage |c= -8A; IB= -80mA

VaE(on)

VECF

Base-Emitter On Voltage

C-E Diode Forward Voltage

lc= -3A; Vce= -3V

IF= -8 A

BDW74 VCE= -30V; IB= 0

BDW74A VCE= -30V; IB= 0

I CEO

Collector Cutoff Current BDW74B VCE= -40V; IB= 0

BDW74C VCE= -50V; IB= 0

BDW74D VCE= -60V; IB= 0

BDW74

VCB= -45V; IE= 0

VCB=-45V;lE=0;Tj=150'C

BDW74A

VCB= -60V; IE= 0

VCB=-60V;lE=0;Tj=150r

ICBO

Collector Cutoff Current BDW74B

VCB= -80V; IE= 0

VCB=-80V;lE=0;Tj=150°C

BDW74C

VCB=-100V; IE=0

VcB=-100V;lE=0;Tj=150-C

BDW74D

VCB=-120V;IE=0

VCB=-120V; lE=0;Tj=150'C

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -3A; VCE= -3V

hpE-2

DC Current Gain

lc= -8A; VCE= -3V

Switching times

ton

Turn-on Time

toff

Turn-off Time

lc=-3A;lBi=-lB2=-12mA;

VBE<offr 3.5V,RL=10fi

MIN TYP.

-45

MAX

UNIT

-60

-80

V

-100

-120

-2.5

V

-4.0

V

-2.5

V

-3.5

V

-0.5

mA

-0.2

-5.0

-0.2

-5.0

-0.2

-5.0

mA

-0.2

-5.0

-0.2

-5.0

-2.0

mA

750

20000

100

1.0

ws

5.0

PS

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