SS32C Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
SS32C Datasheet PDF : 4 Pages
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Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
3.0
SS32-SS36
SS38-SS320
2.5
2.0
1.5
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.6"×0.6"
(16mm×16mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(℃)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
120
8.3ms Single Half Sine Wave
110
JEDEC Method
100
90
80
70
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
1.0
SS32-SS34
SS35-SS36
0.1
SS38-SS310
SS315-SS320
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
SS32-SS36
SS38-SS320
10
Tj=125℃
1.0
Tj=75℃
0.1
0.01
1.4
VF(V)
0.001
0
Tj=25℃
20
40
60
80
100
Voltage(%)
High Diode Semiconductor
2
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