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ATP212 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
ATP212
ON-Semiconductor
ON Semiconductor 
ATP212 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ATP212
10
VDS=30V
9 ID=35A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
Total Gate Charge, Qg -- nC
PD -- Tc
45
35
40
IT14749
40
35
30
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT14751
ASO
3
2 IDP=105A
100
7
5 ID=35A
3
2
10
7
5
10ms
100ms
PW10μs
100μs 10μs
3 Operation in this area
2
is limited by RDS(on).
1.0
7
5
3
2 Tc=25°C
0.1 Single pulse
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
5 7 100
IT14750
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT10478
No. A1507-4/7

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