APTM100DA18T1G Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
APTM100DA18T1G Datasheet PDF : 5 Pages
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APTM100DA18T1G
Boost chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
56
11
CR1
3 NTC
Q2
4
9
10
12
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1000
V
Tc = 25°C
40
Tc = 80°C
30
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
260
±30
V
216
mΩ
PD Maximum Power Dissipation
Tc = 25°C
657
W
IAR Avalanche current (repetitive and non repetitive)
33
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
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