BYW29E-200(2012) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BYW29E-200 Datasheet PDF : 11 Pages
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NXP Semiconductors
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
cathode
A
anode
mb
mounting base; cathode
Simplified outline
mb
BYW29E-200
Ultrafast power diode
Graphic symbol
K
A
001aaa020
3. Ordering information
12
SOD59 (TO-220AC)
Table 3. Ordering information
Type number
Package
Name
BYW29E-200
TO-220AC
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
IRSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
repetitive peak reverse current
non-repetitive peak reverse
current
square-wave pulse; δ = 0.5 ; Tmb ≤ 128 °C;
see Figure 1; see Figure 2
square-wave pulse; δ = 0.5 ; tp = 25 µs;
Tmb ≤ 128 °C
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C
δ = 0.001 ; tp = 2 µs
tp = 100 µs
Tstg
storage temperature
Tj
junction temperature
Electrostatic discharge
VESD
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ
Min Max Unit
-
200 V
-
200 V
-
200 V
-
8
A
-
16 A
-
88 A
-
80 A
-
0.2 A
-
0.2 A
-40 150 °C
-
150 °C
-
8
kV
BYW29E-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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