2SC3182 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SC3182

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SC3182

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

140

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A

2.0

V

VBE(on)

Base-Emitter On Voltage

IC= 5A; VCE= 5V

1.5

V

ICBO

Collector Cutoff Current

VCB= 140V; IE= 0

5 μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

5 μA

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

55

160

hFE-2

DC Current Gain

IC= 5A; VCE= 5V

35

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

220

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

30

MHz

 hFE-1 Classifications

R

O

55-110 80-160

SPTECH website：www.superic-tech.com

2

Share Link: