2SC3309 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3309 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10Ma; IB= 0
VfBRJCBO Collector-Base Breakdown Voltage ' lc=1mA; IE=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 1A; IB= 0.2A
VsE(sat) Base-Emitter Saturation Voltage
lc= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
V6B= 7V; lc= 0
hpE-1
DC Current Gain
lc= 0.1 A; VCE= 5V
hFE-2
DC Current Gain
\c= 1A;VCE=5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
lc= 0.8A; IB1= -lB2= 0.08A
RL=250H;VCc»200V
Pw=20u s;Duty Cycle<1%
2SC3309
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V
100
uA
1
mA
20
8
1.0
us
2.5
us
1.0
ns
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