2SD1073 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD1073

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2SD1073

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector- Base Breakdown Voltage

IC= 0.1mA ; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 10mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 1A; IB= 10mA

ICBO

Collector Cutoff Current

VCB= 300V; IE= 0

IEBO

Emitter Cutoff Current

VEB=30V; IC=0

hFE

DC Current Gain

IC= 2A; VCE= 2V

MIN TYP. MAX UNIT

300

V

250

V

30

V

1.5

V

2.0

V

0.1 mA

0.1 mA

1000

SPTECH website：www.superic-tech.com

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