2SA966 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

2SA966

TRANSISTOR (PNP)

Unspecified 

2SA966 TRANSISTOR (PNP)

FEATURE

Complementary to 2SC2236 and 3 Watts output Applications.

MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1.5

A

Pc

Collector Power Dissipation

0.9

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

TO-92L

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO IC= -1mA , IE=0

-30

Collector-emitter breakdown voltage

V(BR)CEO IC= -10mA ,IB=0

-30

Emitter-base breakdown voltage

V(BR)EBO IE= -1mA, IC=0

-5

Collector cut-off current

ICBO

VCB= -30V, IE=0

Emitter cut-off current

IEBO

VEB= -5V, IC=0

DC current gain

hFE

VCE=-2V, IC= -500mA

100

Collector-emitter saturation voltage

VCE(sat)

IC= -1.5 A, IB= -0.03A

Base-emitter voltage

Transition frequency

Collector output capacitance

VBE

IC= -500mA,VCE=-2V

fT

VCE= -2V, IC=-500mA

Cob

VCB=-10V, IE=0, f=1MHz

TYP

120

MAX

-0.1

-0.1

320

-2

-1

30

UNIT

V

V

V

μA

μA

V

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

O

100-200

Y

160-320

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