ZXMP10A17GTA
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
www.VBsemi.tw
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.7
ID = 250 µA
0.4
ID = 5 mA
0.1
1.6
1.2
0.8
TJ = 125 °C
0.4
TJ = 25 °C
0.0
0
2
4
6
8
10
VGS - Gate-to-SourceVoltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
- 0.2
- 0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by RDS(on)*
1
1 ms
10 ms
100 ms
0.1
1s
TA = 25 °C
10 s
Single Pulse
0.01
DC
0.01
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4