MTB60N06L3 Ver la hoja de datos (PDF) - Cystech Electonics Corp.

Número de pieza

componentes Descripción

Fabricante

MTB60N06L3

N -Channel Enhancement Mode Power MOSFET

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C708L3

Issued Date : 2009.05.26

Revised Date : 2013.10.30

Page No. : 6/8

Typical Characteristics(Cont.)

Typical Transfer Characteristics

40

35

VDS=5V

30

25

20

15

10

5

0

0

2

4

6

8

10

12

VGS, Gate-Source Voltage(V)

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

50

40

TJ(MAX)=150°C

TA=25°C

θJA=45°C/W

30

20

10

0

0.0001 0.001

0.01 0.1

1

Pulse Width(s)

10 100

1

D=0.5

Transient Thermal Response Curves

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.00001

Single Pulse

0.0001

0.001

0.01

0.1

t1, Square Wave Pulse Duration(s)

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=120°C/W

1

10

MTB60N06L3

Preliminary

CYStek Product Specification

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