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PMPB11EN

30 V, N-channel Trench MOSFET

Nexperia B.V. All rights reserved 

PMPB11EN

30 V, N-channel Trench MOSFET

12 July 2018

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Very fast switching

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Tin-plated 100 % solderable side pads for optical solder inspection

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portables

• Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Tj = 25 °C

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s

VGS = 10 V; ID = 9 A; Tj = 25 °C

Min Typ Max

-

-

30

-20 -

20

[1]

-

-

13

-

12

14.5

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

Unit

V

V

A

mΩ

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