2N60F Ver la hoja de datos (PDF) - CHONGQING PINGYANG ELECTRONICS CO.,LTD
Número de pieza
componentes Descripción
Fabricante
2N60F Datasheet PDF : 2 Pages
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Electrical Characteristics (TC=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
/ΔTJ
ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Gate-Body Leakage Current, Forward
IGSSF
VGS=30V, VDS=0V
Gate-Body Leakage Current, Reverse
IGSSR
VGS=-30V, VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V, ID=1A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V, VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V, ID=2A,
Turn-On Rise Time
tr
RG=25Ω (Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=480V, ID=2A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=2A, VGS=0V
Reverse Recovery Time
trr
VGS=0V, IS=2A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/μs, (Note4)
Notes
1. Repetitive Rating: pulse width limited by maximum junction temperature
2. VDD=50V, starling, L=58mH, RG=25Ω, IAS=2A , TJ=25℃
3. ISD≤ID, dI/dt=200A/μs, VDD≤BVDSS, starting TJ=25℃.
4. Pulse width≤300μs; duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
600 －
－
V
－
0.5
－ V/℃
－
－
1
μA
－
－
100
nA
－
－ -100 nA
2
－
4
V
－
－
4
Ω
－ 180 235
pF
－
20
25
pF
－
4.3 5.6
pF
－
9
28
ns
－
25
60
ns
－
24
58
ns
－
28
66
ns
－
8.5
12
nC
－
1.3
－
nC
－
4.1
－
nC
－
－
2
A
－
－
8
A
－
－
1.4
V
－ 230 －
ns
－
1
－
μC
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