SMD Type
Transistors
NPN Transistors
MUN2211 ~ MUN2234
■ Features
● Collector Current Capability IC=100mA
● Collector Emitter Voltage VCEO=50V
PIN1
base
(Input)
R1
R2
PIN3
Collector
(Output)
PIN2
Emitter
(Ground)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
50
50
6
100
200
1.6
625
150
-65 to 150
Unit
V
mA
mW
mW/℃
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 2 mA, IB= 0
VEBO IE= 100μA, IC= 0
ICBO VCB= 50 V , IE= 0
ICEO VCE= 50 V , IE= 0
MUN2211
MUN2212
MUN2213
MUN2214
MUN2215
IEBO VEB= 6V , IC=0
MUN2216
MUN2230
MUN2231
MUN2232
MUN2233
MUN2234
Min Typ Max Unit
50
50
V
6
100
nA
500
0.5
0.2
0.1
0.2
0.9
1.9 mA
4.3
2.3
1.5
0.18
0.13
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