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RX1214B300Y

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

RX1214B300Y

THERMAL CHARACTERISTICS

Tj = 100 °C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Rth mb-h

Zth j-h

thermal resistance from junction to mounting-base

thermal resistance from mounting base to heatsink

thermal impedance from junction to heatsink

note 1

tp = 150 µs; δ = 5 %;

notes 1 and 2

Notes

1. See “Mounting recommendations in the General part of handbook SC19a”.

2. Equivalent thermal impedance under nominal pulse microwave operating conditions.

MAX.

0.8

0.2

0.22

UNIT

K/W

K/W

K/W

CHARACTERISTICS

Tmb = 25 °C unless otherwise specified

SYMBOL

PARAMETER

V(BR)CBO

V(BR)CES

V(BR)EBO

ICBO

IEBO

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector cut-off current

emitter cut-off current

CONDITIONS

IC = 140 mA; IE = 0

IC = 140 mA; RBE = 0 Ω

IC = 0; IE = 20 mA

VCB = 50 V; IE = 0

VEB = 1.5 V; IC = 0

MIN.

65

60

3

−

−

MAX.

−

−

−

14

1.4

UNIT

V

V

V

mA

mA

APPLICATION INFORMATION

Microwave performance at Tmb ≤ 25 °C in a common base class C wideband amplifier.

MODE OF OPERATION

f

(GHz)

VCC

(V)

PL

(W)

GP

(dB)

Pulsed

1.2 to 1.4

50

tp = 150 µs; δ = 5 %

tp = 300 µs; δ = 10 %

1.2 to 1.4

50

≥250

typ. 320

typ. 300

≥7

typ. 8

typ. 7.5

ηC

(%)

≥35

typ. 40

typ. 35

Zi; ZL

(Ω)

see Fig 6

see Fig 6

1997 Feb 19

4

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