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Número de pieza
componentes Descripción
3SK194 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
3SK194
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
3SK194 Datasheet PDF : 9 Pages
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3SK194
Power Gain vs. Drain to Source Voltage
20
V
G2S
= 3 V
I
D
= 10 mA
16
f = 900 MHz
12
8
4
0
4
8
12
16 20
Drain to Source Voltage V
DS
(V)
Noise Figure vs. Drain Current
10
V
DS
= 6 V
V
G2S
= 3 V
8
f = 900 MHz
6
4
2
0
4
8
12
16 20
Drain Current I
D
(mA)
Noise Figure vs. Drain Current
5
V
DS
= 6 V
V
G2S
= 3 V
4
f = 200 MHz
3
2
1
0
4
8
12
16 20
Drain Current I
D
(mA)
Noise Figure vs.
Drain to Source Voltage
5
V
G2S
= 3 V
I
D
= 10 mA
4
f = 200 MHz
3
2
1
0
4
8
12 16 20
Drain to Source Voltage V
DS
(V)
6
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