3SK319 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

3SK319

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Hitachi -> Renesas Electronics 

3SK319

Forward Transfer Admittance

vs. Gate1 Voltage

30

V DS = 3.5 V

VG2S = 3 V

24

18

2.5 V

12

2V

6

1.5 V

1V

0

0.4 0.8 1.2 1.6 2.0

Gate1 to Source Voltage VG1S (V)

Power Gain vs. Drain Current

25

20

15

10

5

V DS = 3.5 V

V G2S = 3 V

f = 900 MHz

0

5

10 15 20 25

Drain Current I D (mA)

Noise Figure vs. Drain Current

5

V DS = 3.5 V

4

V G2S = 3 V

f = 900 MHz

3

2

1

0

5

10 15 20 25

Drain Current I D (mA)

Power Gain vs. Drain to Source Voltage

25

20

15

10

5

V G2S = 3 V

I D = 10 mA

f = 900 MHz

0

2

4

6

8

10

Drain to Source Voltage VDS (V)

4

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