CEU02N9 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

CEU02N9

N-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=900V,ID=2A,RDS(ON)<6Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

CEU02N9

D

G

S

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

EAS

IAR

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-TJ=25℃

Continuous Drain Current-TJ=100℃

Single Pulse Avalanche Energy(note1)

Avalanche Current(note2)

Power Dissipation, TJ=25℃

Operating and Storage Junction Temperature Range

Maximum lead temperature for soldering purpose,1/8”

from case for 5 seconds

Ratings

900

±30

2

1.25

180

2

80

-55 to +150

300

Thermal Characteristics：

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case

1.14

www.doingter.cn

— 1—

Units

V

V

A

mJ

A

W

℃

℃

Units

℃/W

Share Link: