DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

83T03GJ-HF Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd

Número de pieza
componentes Descripción
Fabricante
83T03GJ-HF
VBSEMI
VBsemi Electronics Co.,Ltd 
83T03GJ-HF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
83T03GJ-HF
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300
300
www.VBsemi.tw
250
250
200
200
150
150
Package Limited
100
100
50
50
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
E-mail:China@VBsemi TEL:86-755-83251052
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]