STI12N65M5 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
STI12N65M5 Datasheet PDF : 2 Pages
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isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current ID= 8.5A@ TC=25℃
·Drain Source Voltage-
: VDSS=650V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
8.5
A
IDM
Pulse Drain Current
34
A
Ptot
Total Dissipation@TC=25℃
70
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.79
UNIT
℃/W
STI12N65M5
isc website：www.iscsemi.com
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