STI12N65M5 Ver la hoja de datos (PDF) - Inchange Semiconductor
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STI12N65M5 Datasheet PDF : 2 Pages
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isc N-Channel Mosfet Transistor
STI12N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
650
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4.3A
430 mΩ
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS= Max rating
VDS= Max rating; TC=125℃
1
µA
100
VSD
Diode Forward On-Voltage
IS= 8.5A ;VGS= 0
1.5
V
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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