SI3434DV(2001) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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Fabricante
SI3434DV Datasheet PDF : 4 Pages
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New Product
Si3434DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1200
Capacitance
0.08
0.06
VGS = 2.5 V
0.04
0.02
VGS = 4.5 V
0.00
0
5
10
15
20
25
30
ID – Drain Current (A)
Gate Charge
5
VDS = 15 V
ID = 6.1 A
4
1000
Ciss
800
600
400
200
Coss
Crss
0
0
5
10
15
20
25
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
TJ = 150_C
TJ = 25_C
0.6
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 2 A
0.04
ID = 6.1 A
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
Document Number: 71610
S-03617—Rev. A, 17-Apr-01
0.00
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
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