PJM3416NSA Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
PJM3416NSA Datasheet PDF : 7 Pages
| |||
PJM3416NSA
N- Enhancement Mode Field Effect Transistor
Vgs Gate-Source Voltage (V)
Rdson vs Vgs
5
VDS=10V
ID=6.5A
4
3
2
1
0
0
2
4
6
8
10
12
Qg Gate Charge (nC)
Gate Charge
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02 125°C
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
Vsd Source-Drain Voltage (V)
Source- Drain Diode Forward
1800
1600
1400
Ciss
1200
1000
800
600
400
Coss
200
0 Crss
0
5
10
15
20
Vds Drain-Source Voltage (V)
Capacitance vs Vds
Vds Drain-Source Voltage (V)
Safe Operation Area
www.pingjingsemi.com
4/7
Revision：1.0 May-2019
Share Link: 