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BTA312X-800CT Datasheet PDF : 12 Pages
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WeEn Semiconductors
BTA312X-800CT
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
IT(RMS)
ITSM
I2t
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I2t for fusing
full sine wave; Tmb ≤ 84°C;
Fig.1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
tP = 10 ms; sine wave pulse
dIT/dt
IGM
rate of rise of on-state
current
peak gate current
IG = 70 mA
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
Values
800
12
100
110
50
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A2s
A/μs
A
W
W
°C
°C
16
IT(RMS)
(A)
12
8
4
bhdc1-001
84°C
100
IT(RMS)
(A)
80
60
40
20
bhdc1-002
0
-50
0
50
100
150
Th (°C)
0
10-2
10-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
f = 50 Hz; Th = 84 °C
base temperature; maximum values
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA312X-800CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 August 2020
© WeEn Semiconductors Co., Ltd. 2020. All rights reserved
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