BUX98B Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
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Fabricante
BUX98B Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
isc Product Specification
BUX98B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
☆VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1mA
☆VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 16A ;IB= 3.2A
☆VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 24A ;IB= 5A
☆VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 16A ;IB= 3.2A
VCB=1000V; IE= 0
VCB=1000V; IE= 0 TC=125℃
VCE= 600V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
☆ Pulsed: Pulse duration = 300 ms, duty cycle = 1.5 %
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 16A ;IB1=-IB2= 3.2A;
VCC= 150V
MIN TYP. MAX UNIT
600
V
1000
V
1.5
V
5.0
V
1.6
V
0.4
4
mA
2
mA
2
mA
15
50
1.0 μs
3.0 μs
0.8 μs
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