BDW46 Ver la hoja de datos (PDF) - Inchange Semiconductor

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BDW46

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BDW46

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -10mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA

VBE(on) Base-Emitter On Voltage

IC= -10A ; VCE= -4V

-80

V

-2.0

V

-3.0

V

-3.0

V

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-1.0 mA

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

hFE-2

DC Current Gain

fT

Current-Gain—Bandwidth Product

COB

Output Capacitance

VCE= -40V; IB=B 0

VEB= -5V; IC= 0

IC= -5A ; VCE= -4V

1000

IC= -10A ; VCE= -4V

250

IC= -3A; VCE= -3V; ftest= 1MHz

4

IE= 0; VCB= -10V; ftest= 0.1MHz

-2.0 mA

-2.0 mA

MHz

300 pF

isc Website：www.iscsemi.cn

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