BAV99S Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

Fabricante

BAV99S

Surface Mount Fast Switching Diodes

Diode Semiconductor Korea 

Diode Semiconductor Korea

Surface Mount Fast Switching Diodes

BAV99S

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

UNIT

Reverse breakdown voltage V(BR)R

IR=2.5μA

75

IF=1.0mA

Forward voltage

VF

IF=10mA

IF=50mA

-

IF=150mA

Reverse current

IR

VR=75V

-

Diode Capacitance

CD

VR=0V,f=1.0MHz

-

Reverse Recovery time

trr

IF=IR=10mARL=100Ω

-

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

-

V

0.715

0.855

V

1.0

1.25

1

μA

1.5

pF

4

ns

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