2SC4548 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
2SC4548 Datasheet PDF : 4 Pages
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Production specification
NPN Epitaxial Planar Silicon Transistor
2SC4548
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10uA,IE=0
400
Collector- emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
400
Emitter- base breakdown voltage
V(BR)EBO IE=10uA,IC=0
5
Collector cut-off current
ICBO
VCB=300V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=10V,IC=50mA
60
Base-emitter saturation voltage
VBE(sat)
IC=50mA,IB=5mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
V
V
V
0.1 μA
0.1 μA
200
1
V
0.6 V
Transition frequency
fT
VCE=30V, IC=10mA
70
MHz
Output capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Cob
VCB=30V,IE=0,f=1MHz
Cre
VCB=30V,IE=0,f=1MHz
ton
VCC=150V,IC=50mA,
toff
IB1=IB2=5mA
4
pF
3
pF
0.25
uS
5
uS
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
E055
Rev.A
www.gmicroelec.com
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