2SK2975 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
2SK2975 Datasheet PDF : 3 Pages
| |||
MITSUBISHI RF POWER MOS FET
2SK2975
TYPICAL PERFORMANCE DATA
5
TC=25˚C
IDS VS. VDS
4
5.0V
4.5V
3
4.0V
2
3.5V
3.0V
1
2.5V
VGS=2.0V
0
0 1 2 3 4 5 6 7 8 9 10
VDS(V)
4.5
VDS=9.6V
4.0 TC=25˚C
IDS VS. VGS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS(V)
PO, add VS. Pin
40
100
38
36
90
34
32
80
30
PO
28
70
26
24
60
22
20
18
ηadd
50
16
40
14
12
30
10
8
20
6
4
10
2
0
0
0 2 4 6 8 10 12 14 1618 20 22 24 26 28 30 32
INPUT POWER Pin (dBm)
EQUIVALENT CIRCUIT
46mm
12.5mm
1.5mm
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
34
PO, add VS. VDD
100
90
80
PO
70
60
ηadd
50
40
30
20
10
0
5 6 7 8 9 10 11 12 13
DRAIN SUPPLY VOLTAGE VDD(V)
12mm
22.5mm
16mm
C1
GR40-102
1000pF
C3
GR40-310
31pF
C2
GR40-10
10pF
R1
CR10-562
5600Ω
R2
CR10-562
5600Ω
C7
GR40-102
1000pF
C11
GR40-270
27pF
C12
GR40-130
13pF
L1
4Turns AWG#26,φ1.1
Enameled wire(mm)
C13
GR40-102
1000pF
C14
GR40-10
10pF
3mm
INPUT
C4
C5
C6
GR40-10 GR40-102
VGG 10pF 1000pF 10 µF 50V
Note: Board material-glass epoxi substrate
micri strip line width=2.8mm, ε r :4.8,t=1.6mm
3mm
C8
C9
C10
GR40-10 GR40-102
VDD 10pF
1000pF 10 µF 50V
OUTPUT
Nov. ´97
Share Link: 