STB80NF10T4 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STB80NF10T4

N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB80NF10, STP80NF10

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

ISD

ISDM(1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

1. Pulse width limited by safe operating area

2. Pulse duration=300µs, duty cycle 1.5%

Test conditions

ISD = 80 A, VGS = 0

ISD=80 A, VDD = 50 V

di/dt = 100 A/µs,

Tj=150 °C

Min. Typ. Max Unit

-

80 A

-

320 A

-

1.3 V

106

ns

- 450

nC

8.5

A

Doc ID 6958 Rev 18

5/14

Share Link: