STY100NS20FD(2002) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STY100NS20FD
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STY100NS20FD Datasheet PDF : 8 Pages
| |||
STY100NS20FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 100V, ID = 50A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 100V, ID = 100A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 100V, ID = 100A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 100A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 100A, di/dt = 100A/µs,
VDD = 160V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
42
ns
140
ns
360
nC
35
nC
135
nC
Min. Typ. Max. Unit
245
ns
140
ns
220
ns
Min. Typ. Max. Unit
100
A
400
A
1.6
V
225
ns
1.35
µC
12
A
Safe Operating Area
Thermal Impedance
3/8
Share Link: 