STD110NH02L(2003) Ver la hoja de datos (PDF) - STMicroelectronics
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componentes Descripción
Fabricante
STD110NH02L
(Rev.:2003)
(Rev.:2003)
STMicroelectronics
STD110NH02L Datasheet PDF : 11 Pages
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STD110NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 10 V
ID = 40 A
14
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
224
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 10 V ID= 80 A VGS= 10 V
69
93
nC
13
nC
9
nC
Qoss(6) Output Charge
VDS= 16 V
VGS= 0 V
27
nC
Qgls(7) Third-quadrant Gate Charge VDS< 0 V
VGS= 10 V
64
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V
ID = 40 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
69
40
Max.
54
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
80
A
320
A
VSD (*) Forward On Voltage
ISD = 40 A
VGS = 0
1.3
V
trr
Reverse Recovery Time
ISD = 80 A
di/dt = 100A/µs
47
ns
Qrr
Reverse Recovery Charge
VDD = 15 V
Tj = 150°C
58
nC
IRRM
Reverse Recovery Current
(see test circuit, Figure 5)
2.5
A
(1) Garanted when external Rg=4.7 Ω and tf < tfmax.
(2) Value limited by wire bonding
(3) Pulse width limited by safe operating area.
(4) Starting Tj = 25 oC, ID = 40A, VDD = 10V .
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(6) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A
(7) Gate charge for synchronous operation
Safe Operating Area
Thermal Impedance
3/11
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