B85NF55(2019) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

B85NF55
(Rev.:2019)

Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

STMicroelectronics 

STB85NF55T4, STP85NF55

Electrical characteristics

2

Electrical characteristics

TCASE = 25 °C unless otherwise specified

Table 3. On/off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown voltage VGS = 0 V, ID = 250 μA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 55 V

VGS = 0 V, VDS= 55 V

TC = 125 °C (1)

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance VGS = 10 V, ID = 40 A

1. Defined by design, not subject to production test.

Min. Typ. Max. Unit

55

V

1

µA

10

µA

±100 nA

2

3

4

V

6.2

8.0

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Ciss

Coss

Crss

Qg

Qgs

Qgd

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate-source charge

Gate-drain charge

VDS = 15 V, ID = 40 A

-

VDS = 25 V, f = 1 MHz,

-

VGS = 0 V

-

VDD = 30 V, ID = 80 A,

-

VGS = 0 to 10 V

-

(see Figure 14. Test circuit for gate

charge behavior)

-

120

S

3700

pF

900

pF

310

pF

120

150

nC

30

nC

45

nC

1. Pulsed: pulse duration=300 μs, duty cycle 1.5%

Symbol

td(on)

tr

td(off)

tf

Parameter

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 5. Switching times

Test conditions

Min. Typ. Max. Unit

VDD = 30 V, ID = 40 A,

-

25

-

ns

RG = 4.7 Ω, VGS = 10 V

-

100

-

ns

(see Figure 13. Test circuit for

-

70

-

ns

resistive load switching times and

Figure 18. Switching time

waveform)

-

35

-

ns

DS2569 - Rev 12

page 3/18

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