DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.4
0.3
0.2
VGS = 4 V
0.1
VGS = 10 V
0
ID = 8.0 A
–50
0
50
100
150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
1
10
100
1 000
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 0
1 000
100
10
0.1
1.0
10
100
ID - Drain Current - A
2SK2462
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
4V
1
VGS = 0
0
1.0
2.0
3.0
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
td(off)
tf
td(on)
1.0
0.1
VDD = 50 V
VGS = 10 V
RG = 10 Ω
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
VDD = 80 V 16
ID = 15 A 14
60
12
VDS
10
40
VGS
8
6
20
4
2
0
10
20
30
40
Qg - Gate Charge - nC
5