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Número de pieza
componentes Descripción
1SS383T1G
Hoja de datos
coincide,
conparecido a
1SS383T1G
(1)
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
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ON Semiconductor
Fabricante
Número de pieza
componentes Descripción
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ON Semiconductor
1SS383T1G
Dual Schottky Diode
PDF
Match & Start :
1SS38
3T1G
Galaxy Semi-Conductor
1SS38
9
_
V2
Schottky Barrier Diode
Ver
Galaxy Semi-Conductor
1SS38
8
_
V2
High Speed Switching Diode
Ver
Micro Commercial Components
1SS38
9
15 Volts Switching Diode
Ver
Toshiba
1SS38
4
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION)
Ver
Toshiba
1SS38
8
_
2018
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Ver
PANJIT INTERNATIONAL
1SS38
8
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
Ver
[Zhaoxingwei Electronics ., Ltd
1SS38
9
Schottky Diodes
Ver
KEXIN Industrial
1SS38
7
ULTRA HIGH SPEED SWITCHING APPLICATION
Ver
Diode Semiconductor Korea
1SS38
0
Silicon Epitaxial Planar Diode
Ver
Toshiba
1SS38
1
_
2014
TOSHIBA Diode Silicon Epitaxial Planar Type
Ver
Semtech Electronics LTD.
1SS38
9
PNP SILICON EPITAXIAL POWER TRANSISTOR
Ver
Toshiba
1SS38
3
Diode Silicon Epitaxial Schottky Barrier Type
Ver
Diode Semiconductor Korea
1SS38
8
High Speed Switching Diode
Ver
Micro Commercial Components
1SS38
8
_
2011
45 Volts Switching Diode
Ver
TY Semiconductor
1SS38
9
HIGH SPEED SWITCHING APPLICATION
Ver
1
2
3
4
5
6
7
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