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Número de pieza
componentes Descripción
30F121
Hoja de datos
coincide,
conparecido a
30F121
(1)
comienza con
N/A
termina en
*
T
30F121
(1)
Incluido
N/A
Fabricante
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Toshiba
Fabricante
Número de pieza
componentes Descripción
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Toshiba
30F121
Insulated Gate Bipolar Transistor
PDF
Match & Start :
30F12
1
JILIN SINO-MICROELECTRONICS CO., LTD.
30F12
0AB
FAST RECOVER DIODE
Ver
JILIN SINO-MICROELECTRONICS CO., LTD.
30F12
0C
FAST RECOVER DIODE
Ver
JILIN SINO-MICROELECTRONICS CO., LTD.
30F12
0W
FAST RECOVER DIODE
Ver
Toshiba
30F12
1
Insulated Gate Bipolar Transistor
Ver
Toshiba
30F12
2
IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel
Ver
Toshiba
30F12
3
TOSHIBA TO-220
Ver
Toshiba
30F12
4
Discrete IGBT - 30F124 / GT30F124 / 300V 200A / TO-220SIS Package
Ver
Toshiba
30F12
5
Discrete IGBT - 30G124 ~ 30F125
Ver
Toshiba
30F12
5_
Discrete IGBT - 30G124 ~ 30F125
Ver
Toshiba
30F12
6
30F126 - LCD Plasma common tube TO-220F
Ver
Toshiba
30F12
7
Discrete IGBT - 30G124 ~ 30F125
Ver
Toshiba
30F12
7_
Discrete IGBT - 30G124 ~ 30F125
Ver
Toshiba
30F12
8
Discrete IGBT - 30G124 ~ 30F125
Ver
Toshiba
30F12
8_
Discrete IGBT - 30G124 ~ 30F125
Ver
1
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