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B30N06Q

   Hoja de datos
coincide,
conparecido a
N/A
comienza con
N/A
termina en
N/A
Incluido
*B30N06Q8*(1)
Fabricante
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SHENZHEN DOINGTER SE...
Fabricante
Número de pieza
componentes Descripción
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DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
MTB30N06Q8
N-Channel MOSFET uses advanced trench technology
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Match & Start : B30N06Q
OKAYA
Okaya Electric America, Inc.
B3008
SURGE PROTECTIVE DEVICES
Ver
ETC1
Unspecified
B3048
Desoldering Tool
Ver
OKAYA
Okaya Electric America, Inc.
B3082
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3018
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3007
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3068
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3015
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3036
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3056
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3010
SURGE PROTECTIVE DEVICES
Ver
OKAYA
Okaya Electric America, Inc.
B3033
SURGE PROTECTIVE DEVICES
Ver
Teccor-Electronics
Teccor Electronics
B3050UC
275 V, two-chip sidactor device
Ver
Teccor-Electronics
Teccor Electronics
B3054CA
275 V, two-chip sidactor device
Ver
THINKISEMI
Thinki Semiconductor Co., Ltd.
B30H60G
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode
Ver
Teccor-Electronics
Teccor Electronics
B3050UA
275 V, two-chip sidactor device
Ver
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