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Número de pieza
componentes Descripción
GA10SICP12-247
Hoja de datos
coincide,
conparecido a
GA10SICP12-247
(2)
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
ALL
GeneSiC Semiconducto...
Fabricante
Número de pieza
componentes Descripción
Ver
GeneSiC Semiconductor, Inc.
GA10SICP12-247
_
2014
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
PDF
GeneSiC Semiconductor, Inc.
GA10SICP12-247
Silicon Carbide Junction Transistor/Schottky Diode Co-Pack
PDF
Match & Start :
GA10
SICP12-247
Microsemi Corporation
GA10
2
Nuclear Radiation Resistant, Planar
Ver
Microsemi Corporation
GA10
1
Nuclear Radiation Resistant, Planar
Ver
Microsemi Corporation
GA10
3
Nuclear Radiation Resistant, Planar
Ver
TriQuint Semiconductor
GA10
86
11-Output Clock Buffer
Ver
TriQuint Semiconductor
GA10
87
11-Output Configurable Clock Buffer
Ver
TriQuint Semiconductor
GA10
85
11-Output Configurable Clock Buffer
Ver
TriQuint Semiconductor
GA10
88
11-Output Configurable Clock Buffer
Ver
CUI INC
GA10
06
speaker
Ver
TriQuint Semiconductor
GA10
85MC
11-Output Configurable Clock Buffer
Ver
TriQuint Semiconductor
GA10
85-MC
11-Output Configurable Clock Buffer
Ver
TriQuint Semiconductor
GA10
87-MC
11-Output Configurable Clock Buffer
Ver
International Rectifier
GA10
0NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Ver
International Rectifier
GA10
0TS60U
"HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast™ Speed IGBT
Ver
Vishay Semiconductors
GA10
0NA60U
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Ver
Unspecified
GA10
0-005WD
PCB Mounted Pressure Transducers for Volume OEM Applications
Ver
1
2
3
4
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