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IRF359

   Hoja de datos
coincide,
conparecido a
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
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New Jersey Semicondu...
Fabricante
Número de pieza
componentes Descripción
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NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
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Match & Start : IRF359
IR
International Rectifier
Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
Intersil
Intersil
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Ver
Semelab
Semelab - > TT Electronics plc
N-CHANNEL POWER MOSFET
Ver
Samsung
Samsung
N-CHANNEL POWER MOSFETS
Ver
Fairchild
Fairchild Semiconductor
N-Channel Power MOSFETs, 15 A, 350 V/400 V
Ver
NJSEMI
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
Ver
Iscsemi
Inchange Semiconductor
N-Channel MOSFET Transistor
Ver
IR
International Rectifier
60A Dual Integrated Power Block
Ver
IR
International Rectifier
60A Dual Integrated Power Block
Ver
IR
International Rectifier
SMPS MOSFET
Ver
IR
International Rectifier
SMPS MOSFET
Ver
Fairchild
Fairchild Semiconductor
N-Channel Power MOSFETs, 15 A, 350 V/400 V
Ver
IR
International Rectifier
HEXFET® Power MOSFET
Ver
IR
International Rectifier
SMPS MOSFET
Ver
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