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Número de pieza
componentes Descripción
IRF359
Hoja de datos
coincide,
conparecido a
IRF359
(1)
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
ALL
New Jersey Semicondu...
Fabricante
Número de pieza
componentes Descripción
Ver
New Jersey Semiconductor
IRF359
N-CHANNEL POWER MOSFETS
PDF
Match & Start :
IRF35
9
International Rectifier
IRF35
0
Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 400V, RDS(on) = 0.300 Ohm, ID = 14A
Ver
Inchange Semiconductor
IRF35
3
N-Channel MOSFET Transistor
Ver
Intersil
IRF35
3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Ver
Semelab - > TT Electronics plc
IRF35
0
N-CHANNEL POWER MOSFET
Ver
Samsung
IRF35
1
N-CHANNEL POWER MOSFETS
Ver
Fairchild Semiconductor
IRF35
2
N-Channel Power MOSFETs, 15 A, 350 V/400 V
Ver
New Jersey Semiconductor
IRF35
3
N-CHANNEL POWER MOSFETS
Ver
Inchange Semiconductor
IRF35
0
N-Channel MOSFET Transistor
Ver
International Rectifier
IRF35
46
60A Dual Integrated Power Block
Ver
International Rectifier
IRF35
46M
60A Dual Integrated Power Block
Ver
International Rectifier
IRF35
15S
SMPS MOSFET
Ver
International Rectifier
IRF35
15L
SMPS MOSFET
Ver
Fairchild Semiconductor
IRF35
0-353
N-Channel Power MOSFETs, 15 A, 350 V/400 V
Ver
International Rectifier
IRF35
15SPBF
HEXFET® Power MOSFET
Ver
International Rectifier
IRF35
15LTRL
SMPS MOSFET
Ver
1
2
3
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