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Número de pieza
componentes Descripción
MJ11012G
Hoja de datos
coincide,
conparecido a
MJ11012G
(1)
comienza con
N/A
termina en
N/A
Incluido
N/A
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ON Semiconductor
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componentes Descripción
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ON Semiconductor
MJ11012G
High-Current Complementary Silicon Transistors
PDF
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MJ1101
2G
Mospec Semiconductor
MJ1101
9
complementary silicon power darlington transistor
Ver
Mospec Semiconductor
MJ1101
3
30 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 60-120 VOLTS 200 WATTS
Ver
Wing Shing International Group
MJ1101
5
PNP SILICON DARLINGTON TRANSISTOR
Ver
Wing Shing International Group
MJ1101
3
PNP SILICON DARLINGTON TRANSISTOR
Ver
New Jersey Semiconductor
MJ1101
1
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Ver
ON Semiconductor
MJ1101
4
High-Current Complementary Silicon Transistors
Ver
ON Semiconductor
MJ1101
6
High-Current Complementary Silicon Transistors
Ver
Wing Shing International Group
MJ1101
2
NPN SILICON DARLINGTON TRANSISTOR
Ver
Semelab - > TT Electronics plc
MJ1101
4
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Ver
Inchange Semiconductor
MJ1101
7
Silicon PNP Darlington Power Transistor
Ver
New Jersey Semiconductor
MJ1101
2
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Ver
Central Semiconductor
MJ1101
5
Power Transistors
Ver
Wing Shing International Group
MJ1101
9
PNP SILICON DARLINGTON TRANSISTOR
Ver
Central Semiconductor
MJ1101
3
Power Transistors
Ver
Inchange Semiconductor
MJ1101
5
Silicon PNP Darlington Power Transistor
Ver
1
2
3
4
5
6
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