NX8369TS
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California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Match & Start : NX8369TS
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Electronics
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Laboratories.
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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