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Número de pieza
componentes Descripción
P10N60B2
Hoja de datos
coincide,
conparecido a
N/A
comienza con
N/A
termina en
N/A
Incluido
*P10N60B2D*
(1)
Fabricante
ALL
IXYS CORPORATION
Fabricante
Número de pieza
componentes Descripción
Ver
IXYS CORPORATION
IXS
P10N60B2
D1
High Speed IGBT with Diode Short Circuit SOA Capability
PDF
Match & Start :
P10N6
0B2
PANJIT INTERNATIONAL
P10N6
0
600V N-Channel Enhancement Mode MOSFET
Ver
Silan Microelectronics
P10N6
0CA
10A, 600V N-CHANNEL MOSFET
Ver
Silan Microelectronics
P10N6
0CAFJ
10A, 600V N-CHANNEL MOSFET
Ver
VBsemi Electronics Co.,Ltd
P10N6
0HA
N-Channel 650 V (D-S) MOSFET
Ver
PANJIT INTERNATIONAL
P10N6
5
650V N-Channel Enhancement Mode MOSFET
Ver
VBsemi Electronics Co.,Ltd
P10N6
5
N-Channel 650V (D-S) Power MOSFET
Ver
Dongguan City Niuhang Electronics Co.LTD
P10N6
5F
Silicon 650V N-Channel MOS
Ver
VBsemi Electronics Co.,Ltd
P10N6
5HA
N-Channel 650V (D-S) Power MOSFET
Ver
1
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